ST25DV64K datasheet(144/197 Pages) STMICROELECTRONICS

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9.4

RF electrical parameters

This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the

device in RF mode.

The parameters in the following tables are derived from tests performed under the measurement conditions

summarized in the relevant tables. Check that the operating conditions in the circuit match the measurement

conditions when relying on the quoted parameters.

Table 253. RF characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

fCC

External RF signal frequency

13.553

13.56

13.567

MHz

H_ISO

Operating field according to ISO(1)

Range 6

TA = -40 °C to 85 °C

150

5000

mA/m

Range 8

TA = -40 °C to 105 °C

MICARRIER

10% carrier modulation index

MI = (A - B) / (A + B)

150 mA/m > H_ISO > 1000 mA/m

100% carrier modulation index(1)

MI= (A - B) / (A + B)

100

tMINCD

Minimum time from carrier generation to

first data(1)

From H-field min

fSH

Subcarrier frequency high(1)

fCC/32

423.75

kHz

fSL

Subcarrier frequency low(1)

fCC/28

484.28

Time for ST25DVxxx response(1)

4352/fC

318.6

320.9

323.3

µs

Time between commands(1)

4192/fC

309

311.5

314

Time between commands(1)

4384/fC

323.3

Wt_Block

RF user memory write time (including

internal Verify) (1)(2)

1 block

5.2

4 blocks

19.7

Wt_Byte

RF system memory write time including

internal Verify)(1)(2)

1 byte

4.9

Wt_MB

RF mailbox write time (from VCD request

SOF to ST25DVxxx response EOF)(2)(3)

256 bytes

80.7

tRead_MB

RF mailbox read time (from VCD request

SOF to ST25DVxxx response EOF) (2)(3)

256 bytes

CTUN

Internal tuning capacitor(3)

f = 13.56 MHz

26.5

28.5

30.5

VBACK

Backscattered level, as defined by ISO

test(1)

VMIN_1 (1)

RF input voltage amplitude between AC0

and AC1, VSS pin left floating, VAC0 - VAC1

peak to peak(1)

Inventory and Read operations

4.8

Write operations

5.25

VMIN_2 (1)

AC voltage between AC0 and VSS, or

between AC1 and VSS (1)

Inventory and Read operations

2.25

Write operations

2.7

tBootRF

Without DC supply (no VCC)

Set up time

0.6

tRF_OFF

RF OFF time

Chip reset

1. Evaluated by characterization, not tested in production.

2. For VCD request coded in 1 out of 4 and ST25DVxxx response in high data rate, single sub carrier.

3. Evaluated by characterization at 25 °C. Tested in production at 25 °C, by correlating industrial tester measures with characterization data.

ST25DV04K ST25DV16K ST25DV64K

RF electrical parameters

DS10925 - Rev 11

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