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MBM29F080A Scheda tecnica(PDF) 26 Page - SPANSION

Il numero della parte MBM29F080A
Spiegazioni elettronici  FLASH MEMORY CMOS 8M (1M x 8) BIT
PDF  44 Pages
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Produttore elettronici  SPANSION [SPANSION]
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MBM29F080A Scheda tecnica(HTML) 26 Page - SPANSION

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MBM29F080A-55/-70/-90
25
(Continued)
*1 : This does not include the preprogramming time.
*2 : This timing is for Sector Protection operation.
s
s
s
s ERASE AND PROGRAMMING PERFORMANCE
s TSOP(1) PIN CAPACITANCE
Note : Test conditions TA =
+25°C, f = 1.0 MHz
s SOP PIN CAPACITANCE
Notes :
• Sampled, not 100% tested.
• Test conditions TA = +25°C, f = 1.0 MHz
Description
Symbol
MBM29F080A
Unit
JEDEC Standard
-55
-70
-90
Min Typ Max
Min Typ Max
Min
Typ Max
RESET Pulse Width
tRP
500 —
500
500
ns
RESET Hold Time Before Read
tRH
50
50
50
ns
Program/Erase Valid to RY/BY Delay
tBUSY
55
70
90
ns
Delay Time from Embedded Output
Enable
—tEOE
30
30
40
ns
Parameter
Limits
Unit
Comments
Min
Typ
Max
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure
Byte Programming Time
8
150
µs
Excludes system-level
overhead
Chip Programming Time
8.4
20
s
Excludes system-level
overhead
Erase/Program Cycle
100,000
cycle
Parameter
Symbol
Test Setup
Typ
Max
Unit
Input Capacitance
CIN
VIN = 0
8
10
pF
Output Capacitance
COUT
VOUT = 0
8
10
pF
Control Pin Capacitance
CIN2
VIN = 0
9
10
pF
Parameter
Symbol
Test Setup
Typ
Max
Unit
Input Capacitance
CIN
VIN = 0
8
10.5
pF
Output Capacitance
COUT
VOUT = 0
8
10
pF
Control Pin Capacitance
CIN2
VIN = 0
9.5
11
pF



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