Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

MBM29F080A Scheda tecnica(PDF) 15 Page - SPANSION

Il numero della parte MBM29F080A
Spiegazioni elettronici  FLASH MEMORY CMOS 8M (1M x 8) BIT
PDF  44 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  SPANSION [SPANSION]
Homepage  http://www.spansion.com
Logo SPANSION - SPANSION

MBM29F080A Scheda tecnica(HTML) 15 Page - SPANSION

Back Button MBM29F080A Datasheet HTML 11Page - SPANSION MBM29F080A Datasheet HTML 12Page - SPANSION MBM29F080A Datasheet HTML 13Page - SPANSION MBM29F080A Datasheet HTML 14Page - SPANSION MBM29F080A Datasheet HTML 15Page - SPANSION MBM29F080A Datasheet HTML 16Page - SPANSION MBM29F080A Datasheet HTML 17Page - SPANSION MBM29F080A Datasheet HTML 18Page - SPANSION MBM29F080A Datasheet HTML 19Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 15 / 44 page
background image
MBM29F080A-55/-70/-90
14
This automatic programming operation is completed when the data on DQ7 is equivalent to data written to this
bit at which time the device returns to the read mode and addresses are no longer latched. (See “Hardware
Sequence Flags Table” in “sFLEXIBLE SECTOR-ERASE ARCHITECTURE”.) Therefore, the device requires
that a valid address to the device be supplied by the system at this particular instance of time. Data Polling must
be performed at the memory location which is being programmed.
Any commands written to the chip during this period will be ignored. If a hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from reset/read mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
“Embedded ProgramTM Algorithm” in “sFLOW CHART” illustrates the Embedded ProgrammingTM Algorithm
using typical command strings and bus operations.
Chip Erase
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.
Chip erase does
not require the user to program the device prior to erase. Upon executing the Embedded Erase
Algorithm command sequence the device will automatically program and verify the entire memory for an all zero
data pattern prior to electrical erase. The system is not required to provide any controls or timings during these
operations.
The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates
when the data on DQ7 is “1” (see Write Operation Status section) at which time the device returns to read the
mode.
“Embedded EraseTM Algorithm” in “sFLOW CHART” illustrates the Embedded Erase™ Algorithm using typical
command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of WE, while the command
(Data = 30h) is latched on the rising edge of WE. After time-out of 50
µs from the rising edge of the last sector
erase command, the sector erase operation will begin.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29F080A Command
Definitions Table” in “sFLEXIBLE SECTOR-ERASE ARCHITECTURE”. This sequence is followed with writes
of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between
writes must be less than 50
µs otherwise that command will not be accepted and erasure will start. It is
recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts
can be re-enabled after the last Sector Erase command is written. A time-out of 50
µs from the rising edge of
the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs
within the 50
µs time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window
is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend
during this time-out period will reset the device to the read mode, ignoring the previous command string. Resetting
the device once execution has begun will corrupt the data in that sector. In that case, restart the erase on those
sectors and allow them to complete. (Refer to the Write Operation Status section for DQ3, Sector Erase Timer
operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 15).



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com