BFG520. datasheet(2/14 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFG520; BFG520/X; BFG520/XR

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial

transistors, intended for applications

in the RF frontend in the GHz range,

such as analog and digital cellular

telephones, cordless telephones

(CT1, CT2, DECT, etc.), radar

detectors, pagers and satellite TV

tuners (SATV) and repeater

amplifiers in fibre-optic systems.

The transistors are encapsulated in

4-pin, dual-emitter plastic SOT143

and SOT143R envelopes.

PINNING

DESCRIPTION

BFG520 (Fig.1) Code:

%MF

collector

base

emitter

BFG520/X (Fig.1) Code:

%ML

collector

emitter

base

emitter

BFG520/XR (Fig.2) Code:

%MP

collector

emitter

base

emitter

Fig.1 SOT143B.

fpage

Top view

MSB014

Fig.2 SOT143R.

handbook, 2 columns

Top view

MSB035

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage open base

−−

DC collector current

−−

Ptot

total power dissipation

up to Ts =88 °C; note 1

−−

300

hFE

DC current gain

IC = 20 mA; VCE = 6 V; Tj =25 °C

120

250

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

−

0.3

−

transition frequency

IC = 20 mA; VCE = 6 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral

power gain

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

IC = 20 mA; VCE = 6 V; f = 2 GHz;

Tamb =25 °C

−

S

21

insertion power gain

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

Γs = Γopt ; Ic = 5 mA; VCE =6V;

f = 900 MHz; Tamb =25 °C

−

1.1

1.6

Γs = Γopt ; IC = 20 mA; VCE =6 V;

f = 900 MHz; Tamb =25 °C

−

1.6

2.1

s = Γopt ; IC = 5 mA; VCE = 8 V;

f = 2 GHz; Tamb =25 °C

−

1.9

−

Rev. 04 - 23 November 2007

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