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BFG520. Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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BFG520. Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
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6 / 14 page ![]() NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =25 °C. handbook, halfpage 010 IC (mA) 20 30 25 0 20 15 gain (dB) 10 5 MRA674 MSG GUM Gmax Fig.8 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =25 °C. handbook, halfpage 010 IC (mA) 20 30 25 0 20 15 gain (dB) 10 5 MRA675 MSG GUM Gmax Fig.9 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =25 °C. handbook, halfpage 50 gain (dB) 0 10 MRA676 10 2 103 10 4 10 20 30 f (MHz) 40 MSG GUM Gmax Fig.10 Gain as a function of frequency. IC = 20 mA; VCE = 6 V; Tamb =25 °C. handbook, halfpage 50 gain (dB) 0 10 MRA677 10 2 103 10 4 10 20 30 f (MHz) 40 MSG Gmax GUM Rev. 04 - 23 November 2007 6 of 14 |
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