BFG520. datasheet(4/14 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFG520; BFG520/X; BFG520/XR

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. IC = 20 mA; VCE = 6 V; RL =50 Ω; f = 900 MHz; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz;

measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.

3. dim = −60 dB (DIN 45004B);

Vp =Vo;Vq =Vo −6 dB; Vr =Vo −6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;

measured at f(p+q−r) = 793.25 MHz

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 6 V

−−

hFE

DC current gain

IC = 20 mA; VCE = 6 V

120

250

emitter capacitance

IC =ic =0;VEB = 0.5 V; f = 1 MHz

−

collector capacitance

IE =ie =0;VCB = 6 V; f = 1 MHz

−

0.6

−

Cre

feedback capacitance

IC =0;VCB = 6 V; f = 1 MHz

−

0.3

−

transition frequency

IC = 20 mA; VCE = 6 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral

power gain (note 1)

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb = 25 °C

−

IC = 20 mA; VCE = 6 V; f = 2 GHz;

Tamb = 25 °C

−

S

21

insertion power gain

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb = 25 °C

−

noise ﬁgure

s = Γopt;IC = 5 mA; VCE =6V;

f = 900 MHz; Tamb =25 °C

−

1.1

1.6

Γs = Γopt; IC = 20 mA; VCE =6 V;

f = 900 MHz; Tamb =25 °C

−

1.6

2.1

s = Γopt;IC = 5 mA; VCE =6 V;

f = 2 GHz; Tamb =25 °C

−

1.9

−

PL1

output power at 1 dB gain

compression

IC = 20 mA; VCE = 6 V; RL =50 Ω;

f = 900 MHz; Tamb =25 °C

−

dBm

ITO

third order intercept point

note 2

−

dBm

output voltage

note 3

−

275

−

second order intermodulation

distortion

IC = 20 mA; VCE = 6 V; Vo = 75 mV;

Tamb =25 °C; f(p+q) = 810 MHz

−−50

−

10 log

–





–





--------------------------------------------------------------

dB.

Rev. 04 - 23 November 2007

4 of 14

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