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PIC16F628AESS Scheda tecnica(PDF) 143 Page - Microchip Technology |
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PIC16F628AESS Scheda tecnica(HTML) 143 Page - Microchip Technology |
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143 / 180 page  © 2005 Microchip Technology Inc. DS40044D-page 141 PIC16F627A/628A/648A TABLE 17-1: DC Characteristics: PIC16F627A/628A/648A (Industrial, Extended) PIC16LF627A/628A/648A (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial and -40°C ≤ TA ≤ +125°C for extended Operating voltage VDD range as described in DC specification Table 17-2 and Table 17-3 Parameter No. Sym Characteristic Min Typ† Max Units Conditions Data EEPROM Memory D120 D120A D121 D122 D123 D124 ED ED VDRW TDEW TRETD TREF Endurance Endurance VDD for read/write Erase/Write cycle time Characteristic Retention Number of Total Erase/Write Cycles before Refresh(1) 100K 10K VMIN — 40 1M 1M 100K — 4 — 10M — 5.5 8* — — E/W E/W V ms Year E/W -40 °C ≤ TA ≤ 85°C 85°C ≤ TA ≤ 125°C VMIN = Minimum operating voltage Provided no other specifications are violated -40 °C to +85°C Program Flash Memory D130 D130A D131 D132 D132A D133 D133A D134 EP EP VPR VIE VPEW TIE TPEW TRETP Endurance Endurance VDD for read VDD for Block erase VDD for write Block Erase cycle time Write cycle time Characteristic Retention 10K 1000 VMIN 4.5 VMIN — — 40 100K 10K — — — 4 2 — — — 5.5 5.5 5.5 8* 4* — E/W E/W V V V ms ms year -40 °C ≤ TA ≤ 85°C 85°C ≤ TA ≤ 125°C VMIN = Minimum operating voltage VMIN = Minimum operating voltage VDD > 4.5V Provided no other specifications are violated * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Refer to Section 13.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance. |
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