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MB85RS2MTY Scheda tecnica(PDF) 1 Page - RAMXEED LIMITED |
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MB85RS2MTY Scheda tecnica(HTML) 1 Page - RAMXEED LIMITED |
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1 / 38 page  Copyright 2024 RAMXEED LIMITED Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited. RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's part number unchanged. Memory FeRAM 2M (256 K 8) Bit SPI MB85RS2MTY(AEC-Q100 Compliant) DESCRIPTION MB85RS2MTY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications. MB85RS2MTY adopts the Serial Peripheral Interface (SPI). The MB85RS2MTY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MB85RS2MTY does not need any waiting time in writing process, the write cycle time of MB85RS2MTY is much shorter than that of Flash memories or E2PROM. FEATURES • Bit configuration : 262,144 words 8 bits • Special Sector Region : 256 words 8 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Unique ID • Serial Number : 64 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Serial Peripheral Interface : SPI (Serial Peripheral Interfaces) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) • Operating frequency : 50 MHz (Max) • High endurance : 1013 times / byte • Data retention : 50.4 years (+85 C) 13.7 years (+105 C) 4.2 years (+125 C) or more Under evaluation for more than 4.2years(+125 C) • Operating power supply voltage : 1.8 V to 3.6 V • Low power consumption : Operating power supply current 4 mA (Max@50 MHz) Standby current 220 A (Max) Deep Power Down current 30 A (Max) • Operation ambient temperature range : 40 C to +125 C • Package : 8-pin plastic SOP 150mil 8-pin plastic DFN 5mm 6mm AEC-Q100 Grade 1 compliant RoHS compliant DS501-00061-3v1-E |
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