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IS46TR16640C Scheda tecnica(PDF) 72 Page - Integrated Silicon Solution, Inc

Il numero della parte IS46TR16640C
Spiegazioni elettronici  128MX8, 64MX16 1Gb DDR3 SDRAM
PDF  89 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46TR16640C Scheda tecnica(HTML) 72 Page - Integrated Silicon Solution, Inc

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IS43/46TR16640C, IS43/46TR16640CL
IS43/46TR81280C, IS43/46TR81280CL
Integrated Silicon Solution, Inc. – www.issi.com –
72
Rev. E
12/27/2024
27. The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional 100ps of
derating to accommodate for the lower altemate threshold of 150mV and another 25ps to account for the earlier
reference point [(175mV - 150mV) / 1V/ns].
28. Pulse width of a input signal is defined as the width between the first crossing of Vref(dc) and the consecutive
crossing of Vref(dc).
29. tDQSL describes the instantaneous differential input low pulse width on DQS - DQS#, as measured from one falling
edge to the next consecutive rising edge.
30. tDQSH describes the instantaneous differential input high pulse width on DQS - DQS#, as measured from one rising
edge to the next consecutive falling edge.
31. tDQSH,act + tDQSL,act = 1 tCK,act ; with tXYZ,act being the actual measured value of the respective timing
parameter in the application.
32. tDSH,act + tDSS,act = 1 tCK,act ; with tXYZ,act being the actual measured value of the respective timing parameter
in the application.
33. The tRAS(min) is required in order to complete the internal Precharge during a Read or Write with Auto Precharge.
34. During DLL off (Disable), tWR(min) is the greater of 4nCK or 15ns.
35. For DLL off (Disable)
a. Any Auto Refresh Command must have at least one NOP Command before the next Auto Refresh.
b. If tCK < 40ns, any Auto Refresh Command must be followed by a Precharge All Command.
c. For 85⁰C < tCASE ≤ 95⁰C, tCK(max) = 3.9µs. DLL off is not specified for tCASE > 95⁰C



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