MSC045SMB120SD

Device Specifications

 Data Sheet

© 2025 Microchip Technology Inc. and its subsidiaries

DS50004035A - 3

Table 1-3. Static Characteristics (continued)

Symbol Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain current

VDS = 1200V, VGS = 0V

—

0.03

5.3

µA

VDS = 1200V, VGS = 0V, TJ = 175 °C

—

0.46

—

IGSS

Gate-source leakage current

VGS = 21V/–10V

—

—

±100

nA

Note: 

1. Pulse test: pulse width < 380 μs, duty cycle < 2%.

The following table shows the dynamic characteristics of the device at TJ = 25 °C unless otherwise

specified.

Table 1-4. Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max. Unit

Ciss

Input capacitance

VGS = 0V, VDD = 1000V, VAC = 25 mV,

ƒ = 100 kHz

—

1480 —

pF

Crss

Reverse transfer capacitance

—

5.0

—

Coss

Output capacitance

—

70

—

QG

Total gate charge

VGS = 18V/–5V, VDD = 800V, ID = 10A

—

61

—

nC

QGS

Gate-source charge

—

18

—

QGD

Gate-drain charge

—

10

—

td(on)

Turn-on delay time

VDD = 850V, VGS = 18V/–5V, ID = 30, RG = 8Ω,

Freewheeling diode = MSC045SMB120SD

(VGS = –5V); reference Figure 1-19

—

14

—

ns

tr

Rise time

—

12

—

td(off)

Turn-off delay time

—

20

—

tf

Fall time

—

8

—

Eon

Turn-on switching energy

—

296

—

µJ

Eoff

Turn-off switching energy

—

123

—

ESR

Gate equivalent series resistance f = 1 MHz, 25 mV, drain-to-source short

—

1.05

—

Ω

SCWT

Short circuit withstand time

VDS = 960V, VGS = 18V/0V, RG = 20Ω

—

2

—

µs

EAS

Avalanche energy, single pulse

ID = 2.8A, 100% UIS production tested

580

—

—

mJ

EAS CHAR

ID = 12A, last typical pass

—

1500 —

The following table shows the body diode characteristics of the device at TJ = 25 °C unless otherwise

specified.

Table 1-5. Body Diode Characteristics

Symbol

Characteristic

Test Conditions

Min. Typ. Max. Unit

VSD

Diode forward voltage

ISD = 10A, VGS = 0V

—

3.5

—

V

ISD = 10A, VGS = –5V

—

3.9

5.0

trr

Reverse recovery time

ISD = 30A, VGS = –5V, Drive RG = 8Ω, VDD = 850V,

dI/dt = –9200 A/μs

—

9

—

ns

Qrr

Reverse recovery charge

—

180

—

nC

IRRM

Reverse recovery current

—

31

—

A