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MSC045SMB120SDT/RM Scheda tecnica(PDF) 1 Page - Microchip Technology |
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MSC045SMB120SDT/RM Scheda tecnica(HTML) 1 Page - Microchip Technology |
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1 / 13 page ![]() Data Sheet © 2025 Microchip Technology Inc. and its subsidiaries DS50004035A - 1 Product Overview 1200V, 45 mΩ typical at VGS = 18V, 56 mΩ typical at VGS = 15V, Silicon Carbide (SiC) N-Channel MOSFET, TO-263 7-lead XL with a source sense. 1 2 3 4 5 6 7 GATE SOURCE SENSE SOURCE DRAIN (PIN 2) (FUSED PINS 3, 4, 5, 6, 7) (BACKSIDE TAB) (PIN 1) BACKSIDE TAB Table 1. Ordering Information Catalog Part Number (CPN) Package Packing Media (Qty.) Qualification MSC045SMB120SDT/R TO-263 7-lead XL Tape and Reel (800) Industrial MSC045SMB120SDT/RM Mini Tape and Reel (100) MSC045SMB120SDT/RVAO TO-263 7-lead XL Tape and Reel (800) AEC-Q101 MSC045SMB120SDT/RMVAO Mini Tape and Reel (100) Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant Benefits • High efficiency to enable lighter and more compact system • Simple to drive and easy to parallel • Improved thermal capabilities and lower switching losses • Eliminates the need for external freewheeling diode • Lower system cost of ownership Applications • Photovoltaic (PV) inverter, converter, and industrial motor drives • Smart grid transmission and distribution • Induction heating and welding • Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger • Power supply and distribution 1200V, 45 mΩ N-Channel mSiC™ MOSFET MSC045SMB120SD |
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