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RA4L1 Scheda tecnica(PDF) 41 Page - Renesas Technology Corp

Il numero della parte RA4L1
Spiegazioni elettronici  Renesas Microcontrollers
PDF  125 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RA4L1 Scheda tecnica(HTML) 41 Page - Renesas Technology Corp

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● Total power consumption = Voltage × (Leakage current + Dynamic current)
● Leakage current of IO = Σ (IOL × VOL) / Voltage + Σ (|IOH| × |VCC – VOH|) / Voltage
● Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage
Cin: Input capacitance
Cload: Output capacitance
Regarding θja and Ψjt, see Table 2.19.
Table 2.19
Thermal resistance
Parameter
Package
Symbol
Value*1
Unit
Test conditions
Thermal resistance
48-pin QFN
θja
17.7
°C/W
JESD 51-2 and 51-7
compliant
48-pin LQFP
49.8
64-pin LQFP
42.3
100-pin LQFP
47.1
64-pin BGA
23.3
100-pin BGA
21.6
72-pin WLCSP
30.6
48-pin QFN
Ψjt
0.05
°C/W
JESD 51-2 and 51-7
compliant
48-pin LQFP
1.21
64-pin LQFP
0.71
100-pin LQFP
0.71
64-pin BGA
0.27
100-pin BGA
0.27
72-pin WLCSP
0.05
Note 1. The values are reference values when the 4-layer board is used. Thermal resistance depends on the number of layers or size of the
board. For details, see the JEDEC standards.
2.2.7.1
Calculation guide of ICCmax
Table 2.20 shows the power consumption of each unit.
Table 2.20
Power consumption of each unit (1 of 2)
Dynamic current/
Leakage current
MCU
Domain
Category
Item
Frequency
[MHz]
Current
[uA/MHz]
Current*1
[mA]
Leakage current
Analog
LDO and Leak*2
Ta = 25 °C*3
—
—
1.81
Ta = 55 °C*3
—
—
1.87
Ta = 75 °C*3
—
—
1.96
Ta = 85 °C*3
—
—
2.07
Ta = 95 °C*3
—
—
2.15
Ta = 105 °C*3
—
—
2.34
Ta = 115 °C*3
—
—
2.55
Ta = 125 °C*3
—
—
2.83
RA4L1 Datasheet
2. Electrical Characteristics
R01DS0447EJ0131 Rev.1.31
May 26, 2026
Page 41 of 125



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