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RZ/T2ME Scheda tecnica(PDF) 94 Page - Renesas Technology Corp |
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RZ/T2ME Scheda tecnica(HTML) 94 Page - Renesas Technology Corp |
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94 / 116 page ![]() Table 2.36 xSPI timing Parameter Symbol 1.8 V 3.3 V Unit Reference figure Min. Max. Min. Max. Cycle time SDR tPERIOD 7.5 — 13.3 — ns Figure 2.73 DDR 10.0 — 13.3 — ns Clock output slew rate tSRck 0.75/0.56*2 — 0.56 — V/ns Clock duty cycle distortion tCKDCD 0.0 tPERIOD × 0.05 0.0 tPERIOD × 0.05 ns Clock minimum pulse width tCKMPW tPERIOD × 0.45 — tPERIOD × 0.45 — ns Differential clock crossing voltage VOX(AC) 0.4 × VCC18 0.6 × VCC18 — — V DS duty cycle distortion tDSDCD 0.0 tPERIOD × 0.04 0.0 tPERIOD × 0.04 ns DS minimum pulse width tDSMPW tPERIOD × 0.41 — tPERIOD × 0.41 — ns Data input/output slew rate tSR 0.75/0.56*2 — 0.56 — V/ns Data input setup time (to CK) SDR tSU 2.0 — 2.4 — ns Figure 2.74 Data input hold time (to CK) tH 1.0 — 1.0 — ns Data output delay time tOD — 1.0*3 — 1.4*3 ns Data output hold time tOH -1.0 — -2.3 — ns Data output buffer off time tBOFF -1.0 — -2.3 — ns Data input setup time (to DS) DDR*1 *3 tSU -0.8 — -0.8 — ns Figure 2.75, Figure 2.76 Data input hold time (to DS) tH tPERIOD × 0.41 - 0.8 — tPERIOD × 0.41 - 0.8 — ns Data output setup time (to CK) tSUO 1.0 — 1.0 — ns Data output hold time (to CK) tHO 1.0 — 1.0 — ns CS low to clock high tCSLCKH 6.0/8.0*2 *4 — 8.0*4 — ns Figure 2.74 to Figure 2.76 Clock low to CS high tCKLCSH 6.0/8.0*2 — 8.0 — ns CS high time tCSTD 1 16 1 16 tPERIOD DS low to CS high tDSLCSH 6.0/8.0*2 *5 — 10.6*5 — ns Figure 2.77 CS high to DS tri-state tCSHDST 0.0 tPERIOD 0.0 tPERIOD ns CS low to DS low *8 tCSLDSL 0.0 16.0 *9 0.0 20.0 *9 ns DS tri-state to CS low tDSTCSL 0.0 — 0.0 — ns CK low to DS low *6 tCKLDSL — (0.45 + e) × tPERIOD - 2 *7 — (0.45 + e) × tPERIOD - 2 *7 ns Note 1. The DS shift setting (WRAPCFG.DSSFTCSx[4:0]) is 01000b for xSPI200. Note 2. Specification at 133 MHz / Specification at 100 MHz Note 3. These are values when the OEN assertion is extended in the Output Enable Asserting extension bit (COMCFG.OEASTEX = 1). Note 4. These are the values when the CS assertion is extended in the CS asserting extension bit (LIOCFGCSn.CSASTEX = 1). Note 5. These are the values when the tCKLDSL constraint is satisfied. Note 6. This constraint is necessary only to satisfy the tDSLCSH requirement in JESD251, which specifies that tDSLCSH must be at least 80% of tPERIOD. Set LIOCFGCSn.CSNEGEX to the appropriate value to ensure the memory specification complies with this constraint. Note 7. e = LIOCFGCSn.CSNEGEX Note 8. If the DS is high during the command and modifier phase when using JESD251 Profile 2.0 memory, the time from CS low to DS high must also meet this specification. Note 9. When using JESD251 Profile 1.0 memory or JESD251 Profile 2.0 memory with LIOCFGCSn.LATEMD set to 0, this constraint does not apply if the internal pull-down resistor of the DS pin is enabled. RZ/T2ME Datasheet 2. Electrical Characteristics R01DS0441EJ0110 Rev.1.10 Mar 13, 2026 Page 94 of 116 |
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