RZSLASHT2ME datasheet(104/116 Pages) RENESAS

104 / 116 page

2.5.5.15

Serial Management Interface Timing

Conditions:

VOH = VCC18 × 0.5, VOL = VCC18 × 0.5, C = 30 pF (1.8 V)

VOH = VCC33 × 0.5, VOL = VCC33 × 0.5, C = 30 pF (3.3 V)

Table 2.40

Serial management interface timing

Parameter

Symbol

Min.

Max.

Unit

Reference figure

MDIO

MDC output cycle time

GMAC_MDC,

ETHSW_MDC

TMDCck

—

Figure 2.88

ESC_MDC

400

—

MDIO output delay time (for MDC fall)*1

TMDIOd

—

MDIO input setup time (for MDC

rise)

GMAC_MDC,

ETHSW_MDC

TMDIOs

—

ESC_MDC

—

MDIO input hold time (for MDC rise)

TMDIOh

—

Note 1. The output timing from ETHSW is based on the rising edge of MDC, and the output delay can be set in the register.

tMDCck

GMAC_MDC

ETHSW_MDC

ESC_MDC

(Output)

tMDIOs

tMDIOh

tMDIOd

GMAC_MDIO

ETHSW_MDIO

ESC_MDIO

(Input)

GMAC_MDIO

ETHSW_MDIO

ESC_MDIO

(Output)

Figure 2.88

Serial management interface timing

2.6

USB Characteristics

Table 2.41

On-chip USB low-speed (host only) characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reference figure

Rising time

tLR

—

300

Figure 2.89, Figure 2.90

Falling time

tLF

—

300

Rising/falling time ratio

tLR/tLF

—

125

RZ/T2ME Datasheet

2. Electrical Characteristics

R01DS0441EJ0110 Rev.1.10

Mar 13, 2026

Page 104 of 116

RZ/T2ME Scheda tecnica(PDF) 104 Page - Renesas Technology Corp

RZ/T2ME Scheda tecnica(HTML) 104 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Scheda tecnica Scarica

Link URL