RJK0328DPB-00-J0 datasheet(4/7 Pages) RENESAS

Il numero della parte	RJK0328DPB-00-J0

Spiegazioni elettronici	Silicon N Channel Power MOS FET Power Switching

PDF	7 Pages

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Produttore elettronici	RENESAS [Renesas Technology Corp]

Homepage	http://www.renesas.com

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RJK0328DPB

REJ03G1637-0400 Rev.4.00 Apr 10, 2008

Page 4 of 6

Case Temperature

(°C)

Static Drain to Source on State Resistance

vs. Temperature

–25

100 125

150

ID = 5 A, 10 A, 20 A

VGS = 4.5 V

10 V

Pulse Test

5 A, 10 A, 20 A

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Channel Temperature Tch (

°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

100

125

150

100

0.4

0.8

1.2

1.6

2.0

Pulse Test

5 V

VGS = 0, –5V

10 V

IAP = 30 A

VDD = 15 V

duty < 0.1 %

≥ 50 Ω

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

010

10000

3000

1000

300

100

VGS = 0

f = 1 MHz

Crss

Coss

Ciss

Gate Charge

Qg (nc)

Dynamic Input Characteristics

120

160

200

ID = 60 A

VGS

VDS

VDD = 25 V

10 V

VDD = 25 V

10 V

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