RJK0328DPB-00-J0 datasheet(1/7 Pages) RENESAS

Il numero della parte	RJK0328DPB-00-J0

Spiegazioni elettronici	Silicon N Channel Power MOS FET Power Switching

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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REJ03G1637-0400 Rev.4.00 Apr 10, 2008

Page 1 of 6

RJK0328DPB

Silicon N Channel Power MOS FET

Power Switching

REJ03G1637-0400

Rev.4.00

Apr 10, 2008

Features

• High speed switching

• Capable of 4.5 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

RDS(on) = 1.6 mΩ typ. (at VGS = 10 V)

• Pb-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

G

D

SSS

4

1 23

5

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

60

A

Drain peak current

ID(pulse)

Note1

240

A

Body-drain diode reverse drain current

IDR

60

A

Avalanche current

IAP

Note 2

30

A

Avalanche energy

EAR

Note 2

90

mJ

Channel dissipation

Pch

Note3

65

W

Channel to Case Thermal Resistance

θch-C

1.93

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. Tc = 25

°C

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