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RJK0328DPB-00-J0 Scheda tecnica(PDF) 3 Page - Renesas Technology Corp |
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RJK0328DPB-00-J0 Scheda tecnica(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() RJK0328DPB REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Page 3 of 6 Main Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 100 80 60 40 20 0 2 468 10 100 80 60 40 20 0 12 3 4 5 Tc = 75 °C 25 °C –25 °C 80 60 40 20 0 50 100 150 200 VDS = 10 V Pulse Test VGS = 2.6 V Pulse Test 1 0.3 0.1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 Pulse Test ID = 20 A 10 A 10 3 VGS = 4.5 V 10 V 2.8 V 3.0 V 10 V 3.2 V 4.5 V Pulse Test 0.1 1 10 100 10 100 1000 1 0.1 100 µs PW = 10 ms 1 ms 10 µs Operation in this area is limited by RDS(on) Tc = 25 °C 1 shot Pulse 5 A |
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