BSB019N03LXG datasheet(3/11 Pages) INFINEON

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BSB019N03LX G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

6300

8400

Output capacitance

C oss

2200

2900

Reverse transfer capacitance

Crss

280

Turn-on delay time

t d(on)

-10-

Rise time

t r

7.8

Turn-off delay time

t d(off)

-42-

Fall time

t f

6.4

Gate Charge Characteristics

Gate to source charge

Q gs

-18-

Gate charge at threshold

Q g(th)

-10-

Gate to drain charge

Q gd

-12-

Switching charge

Q sw

-19-

Gate charge total

Q g

-44

Gate plateau voltage

V plateau

2.8

Gate charge total

Q g

V DD=15 V, I D=30 A,

V GS=0 to 10 V

-92-

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

-38-

Output charge

Q oss

V DD=15 V, V GS=0 V

-50-

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

400

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

0.78

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=30 A, R G=1.6 Ω

V DD=15 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 2.0

page 3

2009-05-11

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