BSB019N03LXG datasheet(1/11 Pages) INFINEON

Il numero della parte	BSB019N03LXG

Spiegazioni elettronici	OptiMOS2 Power-MOSFET

PDF	11 Pages

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Produttore elettronici	INFINEON [Infineon Technologies AG]

Homepage	http://www.infineon.com

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BSB019N03LX G

OptiMOSTM2 Power-MOSFET

Features

• Pb-free plating; RoHS compliant

• Dual sided cooling

• Low profile (<0.7 mm)

• Avalanche rated

• Qualified for consumer level application

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Optimized for high switching frequency DC/DC converter

• Low parasitic inductance

• Compatible with DirectFET® package MX footprint and outline

1)

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

174

A

V GS=10 V, T C=100 °C

110

V GS=10 V, T A=25 °C,

R thJA=45 K/W

2)

31

Pulsed drain current

3)

I D,pulse

T C=25 °C

400

Avalanche current, single pulse

4)

I AS

T C=25 °C

50

Avalanche energy, single pulse

E AS

I D=50 A, R GS=25 Ω

290

mJ

Gate source voltage

V GS

±20

V

Value

1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered

trademark of International Rectifier Corporation.

V DS

30

V

R DS(on),max

1.9

m

Ω

I D

174

A

Product Summary

Type

Package

Outline

Marking

BSB019N03LX G

2)

MG-WDSON-2

MX

1003

MG-WDSON-2

Rev. 2.0

page 1

2009-05-11

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