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BSB019N03LXG Scheda tecnica(PDF) 6 Page - Infineon Technologies AG |
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BSB019N03LXG Scheda tecnica(HTML) 6 Page - Infineon Technologies AG |
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6 / 11 page ![]() BSB019N03LX G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 10 4 10 3 10 2 0 102030 V DS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 V SD [V] Rev. 2.0 page 6 2009-05-11 |
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