OptiMOS™ Power-MOSFET

BSB008NE2LX

Target Data Sheet

2

0.2, 2010-07-28

2

Maximum ratings

at

T

3

Thermal characteristics

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current

I

D

--

180

A

V

170

V

47

V

R

Pulsed drain current

1)

1)

See figure 3 for more detailed information

I

D,pulse

--

400

T

Avalanche current, single pulse

2)

2) See figure 13 for more detailed information

I

AS

--

40

Avalanche energy, single pulse

E

AS

--

290

mJ

I

Gate source voltage

V

GS

-20

-

20

V

Power dissipation

P

tot

--

89

W

T

2.8

T

Operating and storage temperature

T

-40

-

150

°C

IEC climatic category; DIN IEC 68-1

55

150

56

Ncm

Table 3

Thermal characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

R

thJC

-

1.0

-

°K/W

bottom

1.4

top

Device on PCB

R

thJA

--

45

6 cm

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.

PCB is vertical in still air.