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BSB008NE2LX Scheda tecnica(PDF) 5 Page - Infineon Technologies AG

Il numero della parte BSB008NE2LX
Spiegazioni elettronici  n-Channel Power MOSFET
PDF  13 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB008NE2LX Scheda tecnica(HTML) 5 Page - Infineon Technologies AG

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OptiMOS™ Power-MOSFET
BSB008NE2LX
Electrical characteristics
Target Data Sheet
4
0.2, 2010-07-28
Table 6
Gate charge characteristics
1)
1) See figure 16 for gate charge parameter definition
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Gate to source charge
Q
gs
-30
-
nC
V
DD=12 V,
I
D=30 A,
V
GS=0 to 4.5 V
Gate charge at threshold
Q
g(th)
-21
-
Gate to drain charge
Q
gd
-65
-
Switching charge
Q
sw
-74
-
Gate charge total
Q
g
-
137
8.1
Gate plateau voltage
V
plateau
-2.2
-
V
Gate charge total
Q
g
-240
-
nC
V
DD=12 V,
I
D=30 A,
V
GS=0 to 10V
Gate charge total, sync. FET
Q
g(sync)
-83
-
V
DS=0.1 V,
V
GS=0 to 4.5 V
Output charge
Q
oss
75
V
DD=12 V, VGS=0 V
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode continuous forward current
I
s
--
89
A
T
C=25 °C
Diode pulse current
I
S,pulse
--
400
Diode forward voltage
V
SD
-0.78
-
V
V
GS=0 V, IF=30 A,
T
j=25 °C
Reverse recovery charge
Q
rr
--
tbd
nC
V
R=15 V, IF=Is,
d
i
F/dt=400 A/µs



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