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BSB008NE2LX Scheda tecnica(PDF) 9 Page - Infineon Technologies AG |
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BSB008NE2LX Scheda tecnica(HTML) 9 Page - Infineon Technologies AG |
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9 / 13 page ![]() OptiMOS™ Power-MOSFET BSB008NE2LX Electrical characteristics diagrams Target Data Sheet 8 0.2, 2010-07-28 Table 14 13 Avalanche characteristics 14 Typ. gate charge I AS=f(tAV); RGS=25 Ω; parameter: Tj(start) V GS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(Tj); ID=1 mA |
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