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SST30VR021 Scheda tecnica(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST30VR021 Scheda tecnica(HTML) 8 Page - Silicon Storage Technology, Inc |
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8 / 12 page ![]() 8 Data Sheet 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR021 / SST30VR022 / SST30VR023 ©2001 Silicon Storage Technology, Inc. S71135-02-000 4/01 380 FIGURE 6: SRAM READ CYCLE TIMING DIAGRAM (ADDRESS CONTROLLED) (OE# = RAMCS# = VIL, WE# = VIH) FIGURE 7: SRAM READ CYCLE TIMING DIAGRAM (OE# OR RAMCS# CONTROLLED) TRC TAA Data Valid 380 ILL F04.0 Data Out Previous Data Valid Address TOH TRC TAA TOE TCO TLZ(2) TOH TOHZ(1) THZ (1,2) Data Valid 380 ILL F05.0 Data Out RAMCS# High-Z Address OE# Notes: 1. THZ and TOHZ are defined as the time at which the outputs achieve the open circuit condition and are referenced to the VOH or VOL. 2. At any given temperature and voltage condition THZ(max) is less than TLZ(min) both for a given device and from device to device. 3. WE# is high for Read cycle. 4. Address valid prior to coincidence with RAMCS# transition low. |
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