JS28F256P33BFE datasheet(1/90 Pages) MICRON

Il numero della parte	JS28F256P33BFE

Spiegazioni elettronici	NumonyxTM StrataFlash Embedded Memory

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Produttore elettronici	MICRON [Micron Technology]

Homepage	http://www.micron.com

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Datasheet

Aug 2009

1

Order Number: 320003-08

NumonyxTM StrataFlash® Embedded Memory

(P33-65nm)

256-Mbit, 512-Mbit (256M/256M)

Datasheet

Product Features

High performance:

— 95ns initial access time for Easy BGA

— 105ns initial access time for TSOP

— 25ns 16-word asynchronous-page read

mode

— 52MHz with zero wait states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16-, and continuous-word options

for burst mode

— Buffered Enhanced Factory Programming at

2.0MByte/s (typ) using 512-word buffer

— 3.0V buffered programming at 1.5MByte/s

(Typ) using 512-word buffer

Architecture:

— Multi-Level Cell Technology: Highest

Density at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

—128-KByte main blocks

— Blank Check to verify an erase block

Voltage and Power:

—VCC (core) voltage: 2.3 V – 3.6 V

—VCCQ (I/O) voltage: 2.3 V – 3.6 V

— Standby current: 65uA (Typ) for 256-Mbit

— Continuous synchronous read current: 21

mA (Typ)/24 mA (Max) at 52 MHz

Security:

— One-Time Programmable Registers:

— 64 unique factory device identifier bits

— 2112 user-programmable OTP bits

— Absolute write protection: VPP = VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

Software:

— 20µs (Typ) program suspend

— 20µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface Command Set compatible

— Common Flash Interface capable

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— 16-bit wide data bus

Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— 65nm ETOX™ X process technology

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