IR21141SS datasheet(21/34 Pages) IRF

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IR21141/IR22141SSPbF

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3 PCB Layout Tips

3.1 Distance from High to Low Voltage

The IR2x14x pinout maximizes the distance between

floating (from DC- to DC+) and low voltage pins. It’s

strongly recommended to place components tied to

floating voltage on the high voltage side of device (VB,

VS side) while the other components are placed on the

opposite side.

3.2 Ground Plane

To minimize noise coupling, the ground plane must not

be placed under or near the high voltage floating side.

3.3 Gate Drive Loops

Current loops behave like antennas and are able to

receive and transmit EM noise. In order to reduce the

EM coupling and improve the power switch turn on/off

performances, gate drive loops must be reduced as

much as possible. Figure 23 shows the high and low

side gate loops.

Moreover, current can be injected inside the gate drive

loop

via

the

IGBT

collector-to-gate

parasitic

capacitance. The parasitic auto-inductance of the gate

loop contributes to developing a voltage across the

gate-emitter, increasing the possibility of self turn-on.

For this reason, it is strongly recommended to place the

three gate resistances close together and to minimize

the loop area (see Fig. 23).

gate

resistance

VS/COM

VB/ VCC

H/LOP

H/LON

SSDH/L

VGE

Gate Drive

Loop

CGC

IGC

Figure 23:

gate drive loop

3.4 Supply Capacitors

The IR2x14x output stages are able to quickly turn on

an IGBT, with up to 2 A of output current. The supply

capacitors must be placed as close as possible to the

device pins (VCC and VSS for the ground tied supply, VB

and VS for the floating supply) in order to minimize

parasitic inductance/resistance.

3.5 Routing and Placement Example

Figure 24 shows one of the possible layout solutions

using a 3 layer PCB. This example takes into account

all the previous considerations. Placement and routing

for supply capacitors and gate resistances in the high

and low voltage side minimize the supply path loop and

the gate drive loop. The bootstrap diode is placed under

the device to have the cathode as close as possible to

the bootstrap capacitor and the anode far from high

voltage and close to VCC.

IR2214

VGH

VGL

DC+

Phase

Top Layer

VEH

VEL

VCC

b) Bottom Layer

c) Ground Plane

Figure 24:

layout example

Information below refers to Fig. 24:

Bootstrap section: R1, C1, D1

High side gate: R2, R3, R4

High side Desat: D2

Low side supply: C2

Low side gate: R5, R6, R7

Low side Desat: D3

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