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AN1625 Scheda tecnica(PDF) 9 Page - STMicroelectronics

Il numero della parte AN1625
Spiegazioni elettronici  L6235 THREE PHASE BRUSHLESS DC MOTOR DRIVER
PDF  39 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1625 Scheda tecnica(HTML) 9 Page - STMicroelectronics

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AN1625 APPLICATION NOTE
D1, D2
: 1N4148
R4
: 100
Ω (1/8 W)
C5
: 10 nF 100V ceramic
C8
: 220 nF 35V ceramic
Due to the high charge pump frequency, fast diodes are required. Connecting the cold side of the bulk capacitor
(C8) to VS instead of GND the average current in the external diodes during operation is less than 10 mA (with R4
= 100
Ω); at startup (when VS is provided to the IC) is less than 200 mA while the reverse voltage is about 10 V
in all conditions. 1N4148 diodes withstand about 200 mA DC (1 A peak), and the maximum reverse voltage is 75
V, so they should fit for the majority of applications.
2.7 Sharing the Charge Pump Circuitry
If more than one device is used in the application, it's possible to use the charge pump from one L6235 to supply
the VBOOT pins of several ICs. The unused CP pins on the slaved devices are left unconnected, as shown in
Figure 8. A 100 nF capacitor (C8) should be connected to the VBOOT pin of each device.
Supply voltage pins (VS) of the devices sharing the charge pump must be connected together.
The higher the number of devices sharing the same charge pump, the lower will be the differential voltage avail-
able for gate drive (VBOOT - VS), causing a higher RDS(ON) for the high side DMOS, so higher dissipating power.
In this case it's recommended to omit the resistor on the CP pin, obtaining a higher current capability of the
charge pump circuitry.
Better performance can also be obtained using a 33 nF capacitor for C5 and using schottky diodes (for example
BAT47).
Sharing the same charge pump circuitry for more than 3÷4 devices is not recommended, since it will reduce the
VBOOT voltage increasing the high-side MOS on-resistance and thus power dissipation.
Figure 8. Sharing the charge pump circuitry.
L6235
VSA
VSB
VBOOT
CP
C18 = 100 nF
To High -Side
Gate Drivers
L6235
VSA
VSB
VBOOT
C8 = 100 nF
To High -Side
Ga te Drivers
To other Devices
CP
D1 = BAT47
D2 = BAT47
C5 = 33nF



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