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IRFH4209DPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRFH4209DPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFH4209DPbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C Reference to 25°C, ID = 10mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, ID = 50A ––– 1.10 1.35 VGS = 4.5V, ID = 50A VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 100µA VGS(th) Gate Threshold Voltage Coefficient ––– -9.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 250 µA VDS = 20V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 300 ––– ––– S VDS = 13V, ID = 50A Qg Total Gate Charge ––– 74 ––– nC VGS = 10V, VDS = 13V, ID = 50A Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 7.5 ––– VDS = 13V Qgs2 Post-Vth Gate-to-Source Charge ––– 4.4 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 12.0 ––– ID = 50A Qgodr Gate Charge Overdrive ––– 12.1 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 16.4 ––– Qoss Output Charge ––– 37 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 0.8 ––– td(on) Turn-On Delay Time ––– 15 ––– VDD = 13V, VGS = 4.5V tr Rise Time ––– 49 ––– ns ID = 50A td(off) Turn-Off Delay Time ––– 21 ––– RG=1.8 tf Fall Time ––– 17 ––– Ciss Input Capacitance ––– 4620 ––– VGS = 0V Coss Output Capacitance ––– 1450 ––– pF VDS = 13V Crss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. EAS Single Pulse Avalanche Energy ––– 247 IAR Avalanche Current ––– 50 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 100 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 400 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 0.75 V TJ = 25°C, IS = 50A, VGS = 0V trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C, IF = 50A, VDD = 13V Qrr Reverse Recovery Charge ––– 83 125 nC di/dt = 300A/µs Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case ––– 1.0 RJC (Top) Junction-to-Case ––– 22 °C/W RJA Junction-to-Ambient ––– 36 RJA (<10s) Junction-to-Ambient ––– 21 Thermal Resistance |
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