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IRFH4209DPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFH4209DPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 9 page  FastIRFET™ IRFH4209DPbF 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 HEXFET® Power MOSFET Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH4209DPbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4209DTRPbF VDSS 25 V RDS(on) max (@ VGS = 10V) 1.10 (@ VGS = 4.5V) 1.35 Qg (typical) 36 nC ID (@TC (Bottom) = 25°C) 100 A m PQFN 5X6 mm Features Benefits Low RDS(ON) (<1.10 m) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses Low Thermal Resistance to PCB (<1.0°C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Notes through are on page 9 Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 44 A ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 260 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 165 IDM Pulsed Drain Current 400 PD @TA = 25°C Power Dissipation 3.5 W PD @TC(Bottom) = 25°C Power Dissipation 125 Linear Derating Factor 0.028 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) 100 Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters |
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