IRFH4209DPBF datasheet(3/9 Pages) IRF

3 / 9 page

IRFH4209DPbF

Submit Datasheet Feedback

March 16, 2015

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.25V

3.0V

BOTTOM

2.75V

60µs PULSE WIDTH

Tj = 25°C

2.75V

Fig 1. Typical Output Characteristics

10203040506070 8090 100

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 20V

VDS= 13V

ID= 50A

Fig 4. Normalized On-Resistance vs. Temperature

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 3. Typical Transfer Characteristics

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

2.75V

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.25V

3.0V

BOTTOM

2.75V

Fig 2. Typical Output Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID = 50A

VGS = 10V

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

TJ = 25°C

TJ = 150°C

VDS = 10V

60µs PULSE WIDTH

IRFH4209DPBF Scheda tecnica(PDF) 3 Page - International Rectifier

IRFH4209DPBF Scheda tecnica(HTML) 3 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9

Scheda tecnica Scarica

Link URL