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MIC2182 Scheda tecnica(PDF) 18 Page - Micrel Semiconductor |
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MIC2182 Scheda tecnica(HTML) 18 Page - Micrel Semiconductor |
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18 / 28 page ![]() MIC2182 Micrel MIC2182 18 June 2000 For the low-side switch (N-channel MOSFET), the dc power dissipation is: P R I (rms) switch2(dc) DS(on)2 SW 2 2 =× Since the ac switching losses for the low side MOSFET is near zero, the total power dissipation is: PP low-side MOSFET(max) switch2(dc) = The total power dissipation for the high side MOSFET is: PP P highsideMOSFET(max) SWITCH 1(dc) AC =+ External Schottky Diode An external freewheeling diode is used to keep the inductor current flow continuous while both MOSFETs are turned off. This dead time prevents current from flowing unimpeded through both MOSFETs and is typically 80ns The diode conducts twice during each switching cycle. Although the average current through this diode is small, the diode must be able to handle the peak current. I I 2 80ns f D(avg) OUT S =× × × The reverse voltage requirement of the diode is: V (rrm) V diode IN = The power dissipated by the Schottky diode is: PI V diode D(avg) F =× where: V F = forward voltage at the peak diode current The external Schottky diode, D2, is not necessary for circuit operation since the low-side MOSFET contains a parasitic body diode. The external diode will improve efficiency and decrease high frequency noise. If the MOSFET body diode is used, it must be rated to handle the peak and average current. The body diode has a relatively slow reverse recovery time and a relatively high forward voltage drop. The power lost in the diode is proportional to the forward voltage drop of the diode. As the high-side MOSFET starts to turn on, the body diode becomes a short circuit for the reverse recovery period, dissipating additional power. The diode recovery and the circuit inductance will cause ringing during the high-side MOSFET turn-on. An external Schottky diode conducts at a lower forward voltage preventing the body diode in the MOSFET from turning on. The lower forward voltage drop dissipates less power than the body diode. The lack of a reverse recovery mechanism in a Schottky diode causes less ringing and less power loss. Depending on the circuit components and oper- ating conditions, an external Schottky diode will give a 1/2% to 1% improvement in efficiency. Figure 12 illustrates the difference in noise on the VSW pin with and without a Schottky diode. Output Capacitor Selection The output capacitor values are usually determined by the capacitors ESR (equivalent series resistance). Voltage rating and RMS current capability are two other important factors in selecting the output capacitor. Recommended capacitors are tantalum, low-ESR aluminum electrolytics, and OS-CON. The output capacitor’s ESR is usually the main cause of output ripple. The maximum value of ESR is calculated by: R V I ESR OUT PP ≤ ∆ where: V OUT = peak to peak output voltage ripple I PP = peak to peak inductor ripple current The total output ripple is a combination of the ESR and the output capacitance. The total ripple is calculated below: ∆V I(1 D) Cf IR OUT PP OUT S 2 PP ESR 2 = ×− × +× () where: D = duty cycle C OUT = output capacitance value f S = switching frequency The voltage rating of capacitor should be twice the output voltage for a tantalum and 20% greater for an aluminum electrolytic or OS-CON. The output capacitor RMS current is calculated below: I (rms) I 12 C PP OUT = The power dissipated in the output capacitor is: P I (rms) R DISS(C C 2 ESR(C ) OUT OUT OUT ) =× Input Capacitor Selection The input capacitor should be selected for ripple current rating and voltage rating. Tantalum input capacitors may fail when subjected to high inrush currents, caused by turning the input supply on. Tantalum input capacitor voltage rating should be at least 2 times the maximum input voltage to maximize reliability. Aluminum electrolytic, OS-CON, and multilayer polymer film capacitors can handle the higher inrush currents without voltage derating. TIME Figure 12. Switch Output Noise With and Without Shottky Diode |
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