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70T653MS12BCGI Scheda tecnica(PDF) 13 Page - Integrated Device Technology |
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70T653MS12BCGI Scheda tecnica(HTML) 13 Page - Integrated Device Technology |
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13 / 24 page ![]() 13 IDT70T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics over the Operating Temperature Range and Supply Voltage Range for RapidWrite Mode Write Cycle(1) Symbol Parameter Min Max Unit tAAS Allowable Address Skew for RapidWrite Mode ____ 1ns tARF Address Rise/Fall Time for RapidWrite Mode 1.5 ____ V/ns 5679 tbl 14 NOTE: 1. Timing applies to all speed grades when utilizing the RapidWrite Mode Write Cycle. Timing Waveform of Address Inputs for RapidWrite Mode Write Cycle 5679 drw 09 A0 A18 tAAS tARF tARF |
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