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STF140N8F7 Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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STF140N8F7 Scheda tecnica(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Electrical characteristics STF140N8F7 6/12 DocID023888 Rev 3 VSD 0.6 20 ID(A) 50 40 60 TJ= -55°C 30 70 80 90 0.7 0.8 0.9 1 1.1 TJ= 25°C TJ= 175°C Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on resistance vs. temperature Figure 12: Source-drain diode forward characteristics VGS 6 4 2 0 0 40 Qg(nC) 80 (V) 8 10 12 20 60 100 C 3000 2000 1000 0 0 20 VDS(V) 40 (pF) Ciss 4000 10 30 50 Coss Crss 60 70 5000 6000 7000 8000 VGS(th) 1 0.8 0.6 0.4 -75 TJ(°C) 25 1.2 0 75 125 -25 175 ID= 250µA RDS(on) 0.8 0.6 0.4 -75 TJ(°C) 25 1.8 0 75 125 -25 175 VGS= 10V 1 1.2 1.4 1.6 |
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