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STF140N8F7 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STF140N8F7 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STF140N8F7 Electrical ratings DocID023888 Rev 3 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 64 (1) A ID Drain current (continuous) at TC = 100 °C 45(1) A IDM(2) Drain current (pulsed) 256 A PTOT Total dissipation at TC = 25 °C 35 W EAS(3) Single pulse avalanche energy 515 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV Tj Operating junction temperature -55 to 175 °C Tstg Storage temperature Notes: (1)Limited by package. (2)Pulse width is limited by safe operating area. (3)Starting Tj =25 °C, Id = 18.5 A, Vdd = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 4.29 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W |
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