STF140N8F7 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STF140N8F7

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DocID023888 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

Drain current

VGS = 0, VDS = 80 V

µA

VGS = 0, VDS = 80 V,

TJ=125 °C

µA

IGSS

Gate-source leakage

current

VDS = 0, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 32 A

3.5

4.3

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 40 V,

f = 1 MHz

6340

Coss

Output capacitance

1195

Crss

Reverse transfer capacitance

105

Total gate charge

VDD = 40 V, ID = 64 A,

VGS = 10 V

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 45 A RG =

4.7 Ω,

VGS = 10 V

Rise time

td(off)

Turn-off-delay time

Fall time

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

256

VSD (2)

Forward on voltage

VGS = 0, ISD = 64 A

1.2

trr

Reverse recovery time

ISD = 64 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

3.2

Notes:

(1)Pulse width is limited by safe operating area

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

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