STGWA40M120DF3 datasheet(3/18 Pages) STMICROELECTRONICS

Il numero della parte	STGWA40M120DF3

Spiegazioni elettronici	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

PDF	18 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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3 / 18 page

DocID026224 Rev 3

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STGW40M120DF3, STGWA40M120DF3

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP

(1)

Pulse width limited by maximum junction temperature.

Pulsed collector current

160

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP

(1)

Pulsed forward current

160

PTOT

Total dissipation at TC = 25 °C

468

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.32

°C/W

RthJC

Thermal resistance junction-case diode

0.74

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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