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STGWA40M120DF3 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STGWA40M120DF3
Spiegazioni elettronici  Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA40M120DF3 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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DocID026224 Rev 3
5/18
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG= 10 Ω
see Figure 29
-35
-
ns
tr
Current rise time
-
15
-
ns
(di/dt)on
Turn-on current slope
-
2100
-
A/µs
td(off)
Turn-off delay time
-
140
-
ns
tf
Current fall time
-
135
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
1.5
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
2.25
-
mJ
Ets
Total switching losses
-
3.75
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
RG= 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 29
-35
-
ns
tr
Current rise time
-
18
-
ns
(di/dt)on
Turn-on current slope
-
1800
-
A/µs
td(off)
Turn-off delay time
-
150
-
ns
tf
Current fall time
-
240
-
ns
Eon
(1)
Turn-on switching losses
-
2.8
-
mJ
Eoff
(2)
Turn-off switching losses
-
3.45
-
mJ
Ets
Total switching losses
-
6.25
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 600V, VGE= 15V,
TJstart= 150°C
10
-
µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V, see Figure 29
di/dt = 1000 A/µs
-
355
-
ns
Qrr
Reverse recovery charge
-
2575
-
nC
Irrm
Reverse recovery current
-
25
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
1110
-
A/µs
Err
Reverse recovery energy
-
1.12
-
mJ
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
see Figure 29
di/dt = 1000 A/µs
-
667
-
ns
Qrr
Reverse recovery charge
-
8500
-
nC
Irrm
Reverse recovery current
-
37
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
3.9
-
mJ



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