STGWA40M120DF3 datasheet(4/18 Pages) STMICROELECTRONICS

Il numero della parte	STGWA40M120DF3

Spiegazioni elettronici	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

PDF	18 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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Electrical characteristics

STGW40M120DF3, STGWA40M120DF3

4/18

DocID026224 Rev 3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.85

2.3

VGE = 15 V, IC = 40 A,

TJ = 125 °C

2.2

VGE = 15 V, IC = 40 A

TJ = 175 °C

2.3

Forward on-voltage

IF = 40 A

2.85

3.95

IF = 40 A TJ = 125 °C

2.25

IF = 40 A TJ = 175 °C

2.1

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-2500

Coes

Output capacitance

275

Cres

Reverse transfer

capacitance

-95

Total gate charge

VCC = 960 V, IC =40 A,

VGE = 15 V, see Figure 30

-125

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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