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STGW80V60DF Scheda tecnica(PDF) 10 Page - STMicroelectronics

Il numero della parte STGW80V60DF
Spiegazioni elettronici  Low thermal resistance
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60DF Scheda tecnica(HTML) 10 Page - STMicroelectronics

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Electrical characteristics
STGW80V60DF, STGWT80V60DF
10/18
DocID024362 Rev 2
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
IC(A)
(ns)
20
40
60
10
80
tf
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
tdoff
100
tr
tdon
100 120
140
GIPD041120131437FSR
t
10
RG(Ω)
(ns)
010
20
100
30
tf
TJ= 175°C, VGE= 15V,
IC= 80A, VCC= 400V
40
1000
tdon
tdoff
tr
GIPD041120131444FSR
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
Irm
0
di/dt(A/μs)
(A)
0
500
1000
40
1500
IF = 80A, Vr = 400V
2000
60
=175°C
=25°C
80
20
TJ
TJ
100
2500
120
GIPD041120131449FSR
trr
0
di/dt(A/μs)
(ns)
0
500
1000
200
1500
IF = 80A, Vr = 400V
2000
300
=175°C
=25°C
100
TJ
TJ
2500
GIPD041120131511FSR
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
Qrr
0
di/dt(A/μs)
(nC)
0
500
1000
6000
1500
IF = 80A, Vr = 400V
2000
=175°C
=25°C
4000
TJ
TJ
2000
2500
GIPD041120131516FSR
Err
0
di/dt(A/μs)
(μJ)
0
500
1000
900
1500
IF = 80A, Vr = 400V
2000
=175°C
=25°C
300
TJ
TJ
600
1200
2500
GIPD041120131521FSR



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