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STGW80V60DF Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STGW80V60DF
Spiegazioni elettronici  Low thermal resistance
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60DF Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW80V60DF, STGWT80V60DF
4/18
DocID024362 Rev 2
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 80 A
1.85
2.3
V
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C
2.15
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C
2.4
V
F
Forward on-voltage
I
F
= 80 A
1.9
2.3
V
I
F
= 80 A T
J
= 125 °C
1.6
V
I
F
= 80 A T
J
= 175 °C
1.5
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5
6
7
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
100
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA



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