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STGW80V60DF Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STGW80V60DF
Spiegazioni elettronici  Low thermal resistance
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80V60DF Scheda tecnica(HTML) 5 Page - STMicroelectronics

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DocID024362 Rev 2
5/18
STGW80V60DF, STGWT80V60DF
Electrical characteristics
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-
10800
-
nF
C
oes
Output capacitance
-
390
-
pF
C
res
Reverse transfer
capacitance
-
220
-
pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 80 A,
V
GE
= 15 V, see
Figure 29
-
448
-
nC
Q
ge
Gate-emitter charge
-
76
-
nC
Q
gc
Gate-collector charge
-
184
-
nC
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5
Ω, V
GE
= 15 V,
see
Figure 28
-60
-
ns
t
r
Current rise time
-
30
-
ns
(di/dt)
on
Turn-on current slope
-
2200
-
A/μs
t
d(off)
Turn-off delay time
-
220
-
ns
t
f
Current fall time
-
17
-
ns
E
on
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
1.8
-
mJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
1
-
mJ
E
ts
Total switching losses
-
2.8
-
mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5
Ω, V
GE
= 15 V
,
T
J
= 175 °C, see
Figure 28
-60
-
ns
t
r
Current rise time
-
30
-
ns
(di/dt)
on
Turn-on current slope
-
2100
-
A/μs
t
d(off)
Turn-off delay time
-
240
-
ns
t
f
Current fall time
-
22
-
ns
E
on
(1)
Turn-on switching losses
-
3.8
-
mJ
E
off
(2)
Turn-off switching losses
-
1.25
-
mJ
E
ts
Total switching losses
-
5.05
-
mJ



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