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ST25DV64K Scheda tecnica(PDF) 172 Page - STMicroelectronics |
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ST25DV64K Scheda tecnica(HTML) 172 Page - STMicroelectronics |
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172 / 220 page ![]() Device parameters ST25DV04K ST25DV16K ST25DV64K 172/220 DocID027603 Rev 4 Table 207. I2C DC characteristics up to 85°C Symbol Parameter Test condition Min. Typ. Max. Unit ILI Input leakage current (SCL, SDA) VIN = VSS or VCC device in Standby mode -0.03 ± 0.1 µA ILI Input leakage current (LPD) VIN = VSS device in Standby mode -0.1 ± 0.5 µA ILO Output leakage current (SDA) SDA in Hi-Z, external voltage applied on SDA: VSS or VCC -0.03 ± 0.1 µA ICC_E2 Operating Supply current (Device select E2 Address) Read(1) VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) -116 160 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) - 220 240 VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) - 510 550 ICC_MB Operating Supply current (Device select MB Address) Read(1) VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) -116 160 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) - 220 240 VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) - 510 550 ICC0 Operating Supply current (Device select E2 Address) Write(1) VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) -110 300 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) -110 330 VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) - 130 430 ICC0_MB Operating Supply current (Device select MB Address) Write(1) VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns) - 170 200 µA VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns) - 280 300 VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns) - 520 600 ICC1 (LPD = 1) Low Power Down supply current VCC = 1.8 V - 0.84 1.5 µA VCC = 3.3 V - 1.3 2 VCC = 5.5 V - 1.7 3 ICC1_PON (LPD = 0) Static Standby supply current after power ON or device select stop or time out VCC = 1.8 V - 72 100 µA VCC = 3.3 V - 76 100 VCC = 5.5 V - 87 120 |
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