ST25DV64K datasheet(180/220 Pages) STMICROELECTRONICS

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Device parameters

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DocID027603 Rev 4

9.4

RF electrical parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device in RF mode.

The parameters in the DC and AC characteristics tables that follow are derived from tests

performed under the Measurement Conditions summarized in the relevant tables.

Designers should check that the operating conditions in their circuit match the measurement

conditions when relying on the quoted parameters.

Table 212. GPO DC characteristics up to 125°C

Symbol

Parameter

Condition

Min

Typ Max Unit

VOL_GPO_CMOS

Output low voltage

(GPO CMOS)

VDCG = 1.8 V, IOL = 0.5 mA

0.4

VDCG = 3.3 V, IOL = 0.5 mA

0.4

VDCG = 5.5 V, IOL = 0.5 mA

0.4

VOH_GPO_CMOS

Output high voltage

(GPO CMOS)

VDCG = 1.8 V, IOH = - 0.5 mA VDCG - 0.4

VDCG = 3.3 V, IOH = - 0.5 mA VDCG - 0.4

VDCG = 5.5 V, IOH = - 0.5 mA VDCG - 0.4

VOL_GPO_OD

Output low voltage

(GPO open drain)

IOL = 1 mA, VCC = 1.8 V

0.28 0.4

IOL = 1 mA, VCC = 3.3 V

0.22 0.4

IOL = 1 mA, VCC = 5.5 V

0.21 0.4

IL_GPO_OD

Output leakage

(GPO open drain)

GPO in Hi-Z, external voltage

applied on GPO: VSS or VCC

- 0.15

0.06 0.15 µA

ILI_VDGC

Input leakage (VDGC)VDGC = 5.5 V

0.1

µA

Table 213. GPO AC characteristics

Symbol

Parameter

Condition

Min

Max Unit

tr_GPO_CMOS

Output rise time

CL = 30 pF, VDCG = 1.8 V to 5.5 V

tf_GPO_CMOS

Output fall time

CL = 30 pF, VDCG = 1.8 V to 5.5 V

Table 214. RF characteristics(1)(2)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

fCC

External RF signal frequency

13.553 13.56

13.5

MHz

H_ISO

Operating field according to ISO

Range 6

TA = -40 °C to 85 °C

150

5000 mA/m

Range 8

TA = -40 °C to 105 °C

MICARRIE

10% carrier modulation index (3)

MI=(A-B)/(A+B)

150 mA/m > H_ISO > 1000 mA/m

100% carrier modulation index

MI=(A-B)/(A+B)(4)

100

tMIN CD

Minimum time from carrier

generation to first data

From H-field min

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