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R7FA2L1AB2DFM Scheda tecnica(PDF) 76 Page - Renesas Technology Corp

Il numero della parte R7FA2L1AB2DFM
Spiegazioni elettronici  Ultra low power 48 MHz Arm짰 Cortex-M23 core, up to 256-KB code flash memory
PDF  110 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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Table 2.50
ACMPLP characteristics (2 of 2)
Conditions: VCC = AVCC0 = 1.6 to 5.5 V, VSS = AVSS0 = 0 V
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Offset voltage
High-speed mode
—
—
—
50
mV
—
Low-speed mode
—
—
—
40
mV
—
Window mode
—
—
—
60
mV
—
Internal reference voltage for window mode
VRFH
—
0.76 × VCC —
V
—
VRFL
—
0.24 × VCC —
V
—
Operation
stabilization wait
time
High-speed mode
Tcmp
100
—
—
µs
—
Low-speed mode
200
—
—
Note 1. The internal reference voltage can be selected as ACMPLP reference voltage only when 2.94 V ≤ VCC ≤ 5.50 V.
Input voltage
Reference voltage
Output voltage
Td
Td
+100 mV
-100 mV
Figure 2.47
Output delay time
2.11
Flash Memory Characteristics
2.11.1
Code Flash Memory Characteristics
Table 2.51
Code flash characteristics (1)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Reprogramming/erasure cycle*1
NPEC
1000
—
—
Times
—
Data hold time After 1000 times NPEC
tDRP
20*2 *3
—
—
Year
Ta = +85°C
Ta = +105°C
Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 1,000),
erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different
addresses in 2-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming
the same address for several times as one erasure is not enabled (overwriting is prohibited).
Note 2. Characteristic when using the flash memory programmer and the self-programming library provided by Renesas Electronics.
Note 3. This result is target spec, may changed after reliability testing.
Table 2.52
Code flash characteristics (2) (1 of 2)
High-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 5.5 V
Parameter
Symbol
ICLK = 1 MHz
ICLK = 48 MHz
Unit
Min
Typ
Max
Min
Typ
Max
Programming time
4-byte
tP4
—
86
732
—
34
321
µs
Erasure time
2-KB
tE2K
—
12.5
355
—
5.6
215
ms
RA2L1 Datasheet
2. Electrical Characteristics
R01DS0385EJ0100 Rev.1.00
Aug 06, 2020
Page 76 of 110



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