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FTK640F Scheda tecnica(PDF) 4 Page - First Silicon Co., Ltd

Il numero della parte FTK640F
Spiegazioni elettronici  18A, 200V, 0.155廓 , N-CHANNEL POWER MOS FET
PDF  7 Pages
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Produttore elettronici  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK640F Scheda tecnica(HTML) 4 Page - First Silicon Co., Ltd

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MOSFET
2014. 3. 10
4/7
Revision No : 0
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FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
1
100
100
TC = 25oC
SINGLE PULSE
1000
OPERATION IN THIS AREA MAY BE
LIMITED BY rDS(ON)
DC
100µs
10µs
1ms
10ms
TC = 25oC
1000
TJ = MAX RATED
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
0
12
24
36
48
6
12
18
24
30
60
7V
6V
5V
4V
10V
8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
6
0
1.0
.
5
0
.
3
0
.
2
0
12
18
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
24
4.0
VGS = 7V
30
VGS = 8V
VGS = 10V
VGS = 5V
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
8
6
4
0
0
2
0.1
1
10
VGS, GATE TO SOURCE VOLTAGE (V)
100
150oC
25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥50V
0
0.6
0.9
1.2
15
30
45
60
ID, DRAIN CURRENT (A)
75
1.5
0
0.3
VGS= 10V
VGS = 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
1.8
1.2
0.6
0
-60 -40 -20
0
20
40
60
TJ, JUNCTION TEMPERATURE (oC)
100 120 140 160
2.4
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 18A
FTK640D/DD/P/F



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