Note 2

2011. 3. 10

3/7

Revision No : 0

THERMAL DATA

PARAMETER

SYMBOL

UNIT

62

Thermal Resistance Junction-Ambient (FTK640P)

θ

JA

1.0

Thermal Resistance Junction-Case (FTK640P)

θ

Jc

˚C / W

RATINGS

SOURCE TO DRAIN DIODE SPECIFICATIONS

1.3

V

18

A

72

A

140

ns

d

=100 A/

µs

0.69

µC

Note:

1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

Source to Drain Diode Voltage (Note 1)

Continuous Source to Drain Current

Pulse Source to Drain Current

Reverse Recovery Time

Reverse Recovery Charge

MAX

Note 2

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

0

50

100

150

0

0.2

0.4

0.6

0.8

1.0

1.2

8

4

0

25

50

75

100

125

150

16

20

12

10

1

10

0.01

0.1

NOTES

0.001

1

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05

FTK640D/DD/P/F