1.Gate

3.Source

2.Drain

18A, 200V, 0.155Ω , N-CHANNEL POWER MOS FET

D

ESCRIPTION

The N-Channel enhancement mode silicon gate power MOSFET

is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

FEATURES

(0.155Ω)

* Single Pulse Avalanche Energy Rated

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

SYMBOL

ORDERING INFORMATION

Order Number

Pin Assignment

Package

1

2

3

Packing

FTK640P

TO-220

G

D

S

Tube

TO-220F

G

D

S

Tube

Note: Pin Assignment:

G: Gate

D: Drain

S: Source

2014. 3. 10

1/7

SEMICONDUCTOR

TECHNICAL DATA

FTK640D/DD/P/F

Revision No : 0

TO-220

1

1

TO-220F

P :

F :

1

TO-263

DD :

1

TO - 252

D :

G

D

S

G

D

S

TO-263

TO-252

FTK640F

FTK640DD

FTK640D