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FTK640F Scheda tecnica(PDF) 5 Page - First Silicon Co., Ltd

Il numero della parte FTK640F
Spiegazioni elettronici  18A, 200V, 0.155廓 , N-CHANNEL POWER MOS FET
PDF  7 Pages
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Produttore elettronici  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK640F Scheda tecnica(HTML) 5 Page - First Silicon Co., Ltd

  FTK640F Datasheet HTML 1Page - First Silicon Co., Ltd FTK640F Datasheet HTML 2Page - First Silicon Co., Ltd FTK640F Datasheet HTML 3Page - First Silicon Co., Ltd FTK640F Datasheet HTML 4Page - First Silicon Co., Ltd FTK640F Datasheet HTML 5Page - First Silicon Co., Ltd FTK640F Datasheet HTML 6Page - First Silicon Co., Ltd FTK640F Datasheet HTML 7Page - First Silicon Co., Ltd  
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2014. 3. 10
5/7
Revision No : 0
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
1.25
1.05
0.95
0.85
0.75
-60 -40 -20
0
20 40 60
TJ, JUNCTION TEMPERATURE (oC)
100 120 140 160
1.15
80
ID = 250µA
3000
600
0
1
10
100
1800
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈CDS + CGD
VGS = 0V, f = 1MHz
25oC
ID, DRAIN CURRENT (A)
0
0
6
12
18
24
3
6
9
12
15
30
150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.8
1.2
1.6
2.0
0.4
1
10
100
VSD, SOURCE TO DRAIN VOLTAGE (V)
1000
25oC
150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Qg, GATE CHARGE (nC)
0
0
15
30
45
60
4
8
12
16
20
75
ID = 28A
VDS = 100V
VDS = 160V
VDS = 40V
FTK640D/DD/P/F



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