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ST25DV64KC Scheda tecnica(PDF) 150 Page - STMicroelectronics

Il numero della parte ST25DV64KC
Spiegazioni elettronici  Dynamic NFC/RFID tag IC with 4-Kbit, 16-Kbit or 64-Kbit EEPROM, fast transfer mode capability and optimized I2C
PDF  203 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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ST25DV64KC Scheda tecnica(HTML) 150 Page - STMicroelectronics

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9.4
RF electrical parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the
device in RF mode.
The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the
Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions
in their circuit match the measurement conditions when relying on the quoted parameters.
Table 256. RF characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
fCC
External RF signal frequency
-
13.553
13.56
13.567
MHz
H_ISO
Operating field according to ISO(1)
Range 6
TA = -40 °C to 85 °C
150
-
5000
mA/m
Range 8
TA = -40 °C to 105 °C
MICARRIER
10% carrier modulation index
MI=(A-B)/(A+B)
150 mA/m > H_ISO > 1000 mA/m
10
-
30
%
100% carrier modulation index
MI=(A-B)/(A+B) (2)
95
-
100
tMIN CD
Minimum time from carrier generation to
first data(1)
From H-field min
-
-
1
ms
fSH
Subcarrier frequency high(1)
FCC/32
-
423.75
-
kHz
fSL
Subcarrier frequency low(1)
FCC/28
-
484.28
-
kHz
t1
Time for ST25DVxxKC response(1)
4352/FC
318.6
320.9
323.3
µs
t2
Time between commands(1)
4192/FC
309
311.5
314
µs
t3
Time between commands(1)
4384/FC
323.3
-
-
µs
Wt_Block
RF User memory write time (including
internal Verify) (1)(3)
1 Block
-
5.2
-
ms
4 Blocks
-
19.7
-
ms
Wt_Byte
RF system memory write time including
internal Verify)(1)(3)
1 Byte
-
4.9
-
ms
Wt_MB
RF Mailbox write time (from VCD request
SOF to ST25DVxxKC response EOF)(1)(3)
256 Byte
-
80.7
-
ms
Read_MB
RF Mailbox read time (from VCD request
SOF to ST25DVxxKC response EOF) (1)(3)
256 Byte
-
81
-
ms
CTUN
Internal tuning capacitor(2)
f = 13.56 MHz
-
28.5
-
pF
VBACK
Backscattered level as defined by ISO test
-
10
-
-
mV
VMIN_1
RF input voltage amplitude between AC0
and AC1, VSS pin left floating, VAC0-VAC1
peak to peak(1)
Inventory and Read operations
-
4.8
-
V
Write operations
-
5.25
-
V
VMIN_2
AC voltage between AC0 and VSS or
between AC1 and VSS (1)
Inventory and Read operations
-
2.25
-
V
Write operations
-
2.7
-
V
tBootRF
Without DC supply (No VCC)(1)
Set up time
-
0.6
-
ms
tRF_OFF
RF OFF time(1)
Chip reset
2
-
-
ms
1. Evaluated by Characterization – Not tested in production.
2. Evaluated by Characterization – Tested in production by correlating industrial tester measure with
characterization results.
3. For VCD request coded in 1 out of 4 and ST25DVxxKC response in high data rate, single sub carrier.
ST25DV04KC ST25DV16KC ST25DV64KC
RF electrical parameters
DS13519 - Rev 3
page 150/203



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