6.4 Thermal Information (continued)

THERMAL METRIC(1)

DRL (SOT-563)

UNIT

6 PINS

RθJB

Junction-to-board thermal resistance

32.2

°C/W

ΨJT

Junction-to-top characterization parameter

2.1

°C/W

YJB

Junction-to-board characterization parameter

31.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

This RθJA_effective is tested on TPS563202EVM board (2 layer, copper thickness of top and bottom layer are 2-oz) at VIN = 12 V, VOUT

= 5 V, IOUT = 3 A , TA = 25 oC.

6.5 Electrical Characteristics

Over operating TJ = –400C-1250C, VVIN = 12 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT SUPPLY VOLTAGE

VIN

Input voltage range

VIN

4.2

17

V

IVIN

VIN Supply Current

No load, VEN = 5 V, non-switching, PSM

version

110

µA

No load, VEN = 5 V, VFB = 0.7 V, FCCM

version

350

µA

IINSDN

VIN Shutdown Current

No load, VEN = 0 V

7

µA

UVLO

UVLO

VIN Undervoltage Lockout

Wake up VIN voltage

3.6

3.8

4

V

UVLO

VIN Undervoltage Lockout

Shut down VIN voltage

3.2

3.4

3.6

V

UVLO

VIN Undervoltage Lockout

Hysteresis VIN voltage

400

mV

FEEDBACK VOLTAGE

VFB

FB voltage

TJ = 25°C, Vin = 4.2 - 17 V

591

600

609

mV

VFB

FB voltage

TJ =- 40°C to 125°C, Vin = 4.2 - 17 V

588

600

612

mV

MOSFET

RDS

(ON)HI

High-side MOSFET Rds(on)

TJ = 25°C, VVIN ≥ 5 V

110

mΩ

RDS

(ON)LO

Low-side MOSFET Rds(on)

TJ = 25°C, VVIN ≥ 5 V

60

mΩ

DUTY CYCLE and FREQUENCY CONTROL

FSW

Switching Frequency (1)

TJ = 25°C, VVOUT = 1.0 V

600

kHz

TOFF(MIN) Minimum Off-time

VFB = 0.5 V

100

ns

TON(MIN) Minimum On-time

TJ = 25°C

55

ns

CURRENT LIMIT

IOCL_LS

Over Current threshold

Valley current set point

3

3.9

4.7

A

INOCL

Negative Over Current threshold

Valley current set point

1

1.8

2.5

A

LOGIC THRESHOLD

VEN(ON)

EN Threshold High-level

Vin = 4.2 - 17 V

1.15

1.2

1.28

V

VEN(OFF) EN Threshold Low-level

Vin = 4.2 - 17 V

0.93

1

1.05

V

VENHYS

EN Hystersis

200

mV

OUTPUT DISCHARGE and SOFT START

IEN

EN Pull down current

VEN = 1.5 V

1

uA

tSS

Internal Soft-start Time

1.4

ms

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TPS563203, TPS563206

SLUSEZ4 – MARCH 2023

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